Tunable p-Type Conductivity and Transport Properties of AlN Nanowires via Mg Doping-Reference-Cited by-同舟云学术

Tunable p-Type Conductivity and Transport Properties of AlN Nanowires via Mg Doping

Published:2011-04-15 Issue:5 Volume:5 Page:3591-3598
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Tang Yong-Bing¹,Bo Xiang-Hui¹,Xu Jun¹,Cao Yu-Lin¹,Chen Zhen-Hua¹,Song Hai-Sheng¹,Liu Chao-Ping¹,Hung Tak-Fu¹,Zhang Wen-Jun¹,Cheng Hui-Ming²,Bello Igor¹,Lee Shuit-Tong¹,Lee Chun-Sing¹

Affiliation:

1. Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, People's Republic of China,

2. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn200963k

Reference43 articles.

1. Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)‐SiC(0001)

2. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

3. Field emission from open ended aluminum nitride nanotubes

4. Field emission properties of heavily Si-doped AlN in triode-type display structure

5. Vapor−Solid Growth and Characterization of Aluminum Nitride Nanocones

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