Visible Light Response of Unintentionally Doped ZnO Nanowire Field Effect Transistors-Reference-Cited by-同舟云学术

Visible Light Response of Unintentionally Doped ZnO Nanowire Field Effect Transistors

Published:2009-08-28 Issue:38 Volume:113 Page:16796-16801
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Liu Yang¹,Zhang Zhiyong¹,Xu Huilong¹,Zhang Lihuan¹,Wang Zhenxing¹,Li Wenliang¹,Ding Li¹,Hu Youfan¹,Gao Min¹,Li Quan¹,Peng Lian-Mao¹

Affiliation:

1. Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China, Department of Physics, The Chinese University of Hong Kong, Shatin, New Territory, Hong Kong, China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp9046038

Reference25 articles.

1. A comprehensive review of ZnO materials and devices

2. Optical Properties of ZnO Nanostructures

3. ZnO Nanowire Field-Effect Transistors

4. Piezoelectric Nanogenerators Based on Zinc Oxide Nanowire Arrays

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