High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity-Reference-Cited by-同舟云学术

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High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity

Published:2015-03-02 Issue:3 Volume:15 Page:2001-2005
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Gao Yuanda¹,Shiue Ren-Jye²,Gan Xuetao³,Li Luozhou²,Peng Cheng²,Meric Inanc³,Wang Lei¹,Szep Attila⁴,Walker Dennis⁴,Hone James¹,Englund Dirk²

Affiliation:

1. Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States

2. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

3. Department of Electrical Engineering, Columbia University, New York, New York 10027, United States

4. Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Ohio, 45433, United States

Funder

Basic Energy Sciences

Office of Naval Research

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl504860z

Reference33 articles.

1. Silicon Photonics

2. High-Performance Modulators and Switches for Silicon Photonic Networks-on-Chip

3. Silicon optical modulators

4. Device Requirements for Optical Interconnects to Silicon Chips

5. A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor

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