The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene-Reference-Cited by-同舟云学术

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The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene

Published:2010-10-08 Issue:10 Volume:4 Page:6055-6063
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Kalbac Martin¹²,Reina-Cecco Alfonso³,Farhat Hootan³,Kong Jing²,Kavan Ladislav¹,Dresselhaus Mildred S.²⁴

Affiliation:

1. J. Heyrovský Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, v.v.i., Dolejškova 3, CZ-18223 Prague 8, Czech Republic

2. Department of Electrical Engineering and Computer Science, MIT, Cambridge, Massachusetts 02139, United States

3. Department of Materials Science and Engineering, MIT, Cambridge, Massachusetts 02139, United States

4. Department of Physics, MIT, Cambridge, Massachusetts 02139, United States

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn1010914

Reference23 articles.

1. Charge Transfer Chemical Doping of Few Layer Graphenes: Charge Distribution and Band Gap Formation

2. Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor

3. Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene

4. Energy Dissipation in Graphene Field-Effect Transistors

5. Raman spectroscopy in graphene

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