The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene-Reference-Cited by-同舟云学术

The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene

Author:

Kalbac Martin¹²,Reina-Cecco Alfonso³,Farhat Hootan³,Kong Jing²,Kavan Ladislav¹,Dresselhaus Mildred S.²⁴

Affiliation:

1. J. Heyrovský Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, v.v.i., Dolejškova 3, CZ-18223 Prague 8, Czech Republic

2. Department of Electrical Engineering and Computer Science, MIT, Cambridge, Massachusetts 02139, United States

3. Department of Materials Science and Engineering, MIT, Cambridge, Massachusetts 02139, United States

4. Department of Physics, MIT, Cambridge, Massachusetts 02139, United States

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

Reference23 articles.

Cited by 236 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

4. Thermal Transport of Defect Graphene by Raman Spectroscopy;2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz);2023-09-17