Ionic Liquid Crystal Thin Film as Switching Layer in Nonvolatile Resistive Memory-Reference-Cited by-同舟云学术

Ionic Liquid Crystal Thin Film as Switching Layer in Nonvolatile Resistive Memory

Published:2023-11-01 Issue: Volume: Page:
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhang Wenzhong¹^ORCID,Komatsu Haruka¹,Maruyama Shingo¹^ORCID,Kaminaga Kenichi¹,Matsumoto Yuji¹^ORCID

Affiliation:

1. Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

Funder

Japan Society for the Promotion of Science

Japan Science and Technology Agency

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c13980

Reference47 articles.

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2. Baek, I. G.; Lee, M. S.; Seo, S.; Lee, M. J.; Seo, D. H.; Suh, D.S.; Park, J. C.; Park, S. O.; Kim, H. S.; Yoo, I. K.; Chung, U. I.; Moon, J. T. Highly Scalable Non-volatile Resistive Memory using Simple Binary Oxide Driven by Asymmetric Unipolar Voltage Pulses. IEEE International Electron Devices Meeting; IEEE, 2004.

3. Nanoionics-based resistive switching memories

4. Resistive Switching Multistate Nonvolatile Memory Effects in a Single Cobalt Oxide Nanowire

5. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

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