Boosting Thermoelectric Performance in Epitaxial GeTe Film/Si by Domain Engineering and Point Defect Control-Reference-Cited by-同舟云学术

Boosting Thermoelectric Performance in Epitaxial GeTe Film/Si by Domain Engineering and Point Defect Control

Published:2023-05-16 Issue:21 Volume:15 Page:26104-26110
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Ishibe Takafumi¹^ORCID,Komatsubara Yuki¹,Ishikawa Kodai¹,Takigawa Sho¹,Naruse Nobuyasu²^ORCID,Mera Yutaka²,Yamashita Yuichiro³,Ohishi Yuji⁴,Nakamura Yoshiaki¹^ORCID

Affiliation:

1. Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan

2. Department of Fundamental Bioscience, Shiga University of Medical Science, Otsu, Shiga 520-2192, Japan

3. National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8563, Japan

4. Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c01404

Reference61 articles.

1. New bulk Materials for Thermoelectric Power Generation: Clathrates and Complex Antimonides

2. Concepts for medium-high to high temperature thermoelectric heat-to-electricity conversion: a review of selected materials and basic considerations of module design

3. Thermoelectric Enhancement of Silicon Membranes by Ultrathin Amorphous Films

4. Elucidation of the Formation Mechanism of Highly Oriented Multiphase Ruddlesden–Popper Perovskite Solar Cells

5. Probing memristive switching in nanoionic devices

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