Ultralow Power and Shifting-Discretized Magnetic Racetrack Memory Device Driven by Chirality Switching and Spin Current-Reference-Cited by-同舟云学术

Ultralow Power and Shifting-Discretized Magnetic Racetrack Memory Device Driven by Chirality Switching and Spin Current

Published:2023-08-15 Issue:33 Volume:15 Page:39946-39955
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Li Shen¹²³^ORCID,Lin Xiaoyang¹³^ORCID,Li Pingzhi²,Zhao Suteng¹,Si Zhizhong¹,Wei Guodong¹,Koopmans Bert²^ORCID,Lavrijsen Reinoud²^ORCID,Zhao Weisheng¹³^ORCID

Affiliation:

1. School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China

2. Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands

3. Hefei Innovation Research Institute, Beihang University, Hefei 230013, China

Funder

H2020 Marie Sklodowska-Curie Actions

HORIZON EUROPE Marie Sklodowska-Curie Actions

Beijing Municipal Natural Science Foundation

China Scholarship Council

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c06447

Reference55 articles.

1. Nonvolatile Multistates Memories for High-Density Data Storage

2. A review of emerging non-volatile memory (NVM) technologies and applications

3. Magnetic Domain-Wall Racetrack Memory

4. Magnetic Racetrack Memory: From Physics to the Cusp of Applications Within a Decade

5. Domain wall memory: Physics, materials, and devices

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dzyaloshinskii-Moriya interaction torques and domain wall dynamics in van der Waals heterostructures;Physical Review B;2024-08-07

2. A Low-Cost Fault-Tolerant Racetrack Cache Based on Data Compression;IEEE Transactions on Circuits and Systems II: Express Briefs;2024-08

3. Enhancing spin–orbit torques with a low voltage in metallic multi-layered heterostructures;Journal of Applied Physics;2023-10-16