Fabrication of a Field-Effect Transistor Based on 2D Novel Ternary Chalcogenide PdPS-Reference-Cited by-同舟云学术

Fabrication of a Field-Effect Transistor Based on 2D Novel Ternary Chalcogenide PdPS

Published:2023-09-01 Issue:36 Volume:15 Page:42891-42899
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lee Bom¹,Jeong Byung Joo¹,Choi Kyung Hwan²,Cho Sooheon¹,Jeon Jiho²,Kang Jinsu¹,Zhang Xiaojie¹,Bang Hyeon-Seok¹³,Oh Hyung-Suk¹³⁴^ORCID,Lee Jae-Hyun⁵^ORCID,Yu Hak Ki⁵^ORCID,Choi Jae-Young¹²⁴^ORCID

Affiliation:

1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea

2. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea

3. Clean Energy Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea

4. KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University, Suwon 16419, Republic of Korea

5. Department of Materials Science and Engineering & Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea

Funder

National Research Foundation of Korea

Korea Institute of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c09679

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5. Transport properties of Mo6S3I6 nanowire networks