Low Resistivity and High Breakdown Current Density of 10 nm Diameter van der Waals TaSe3 Nanowires by Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Low Resistivity and High Breakdown Current Density of 10 nm Diameter van der Waals TaSe3 Nanowires by Chemical Vapor Deposition

Published:2019-06-18 Issue:7 Volume:19 Page:4355-4361
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Empante Thomas A.¹^ORCID,Martinez Aimee¹,Wurch Michelle¹,Zhu Yanbing²,Geremew Adane K.³^ORCID,Yamaguchi Koichi¹,Isarraraz Miguel¹,Rumyantsev Sergey³⁴,Reed Evan J.²,Balandin Alexander A.³,Bartels Ludwig¹^ORCID

Affiliation:

1. Department of Chemistry and Material Science & Engineering Program, University of California—Riverside, Riverside, California 92521, United States

2. Department of Materials Science and Engineering, Stanford University, Stanford, California 94304, United States

3. Nano-Device Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, United States

4. Center for Terahertz Research and Applications, Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw 01-142, Poland

Funder

Air Force Office of Scientific Research

Semiconductor Research Corporation

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.9b00958

Reference55 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. The electronic properties of graphene

3. Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

4. Experimental observation of the quantum Hall effect and Berry's phase in graphene

5. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

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