Charge Mobility and Strain Engineering in Two-Step MS-Grown MoS<sub>2</sub>/Seed Layer Heterointerface and Photo-Excitation Mechanism-Reference-Cited by-同舟云学术

Charge Mobility and Strain Engineering in Two-Step MS-Grown MoS₂/Seed Layer Heterointerface and Photo-Excitation Mechanism

Published:2023-03-28 Issue:13 Volume:15 Page:17364-17376
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Wang Ze-Miao¹,Yao Cheng-Bao¹^ORCID,Wang Li-Yuan¹,Wang Xue¹,Jiang Cai-Hong¹,Yin Hai-Tao¹^ORCID

Affiliation:

1. Key Laboratory of Photonic and Electric Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, Heilongjiang Province, China

Funder

Harbin Normal University

Natural Science Foundation of Heilongjiang Province

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c00706

Reference67 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Emerging opportunities in the two-dimensional chalcogenide systems and architecture

3. Sensing Behavior of Atomically Thin-Layered MoS2 Transistors

4. A hidden symmetry-broken phase of MoS2 revealed as a superior photovoltaic material

5. Probing the intrinsic optical quality of CVD grown MoS2

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