Electrical Activity and Extremes of Individual Suspended ZnO Nanowires for 3D Nanoelectronic Applications-Reference-Cited by-同舟云学术

Electrical Activity and Extremes of Individual Suspended ZnO Nanowires for 3D Nanoelectronic Applications

Published:2023-09-08 Issue:37 Volume:15 Page:44433-44443
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Djoulde Aristide¹^ORCID,He Mengfan¹²,Liu Xinyue¹,Kong Lingdi¹²,Zhao Pengfei¹,Rao Jinjun¹,Chen Jinbo¹,Meng Lingjun³,Wang Zhiming¹,Liu Mei¹²

Affiliation:

1. Shanghai Key Laboratory of Intelligent Manufacturing and Robotics, School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200444, China

2. Guangdong Provincial Key Laboratory of Fuel Cell Technology, School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou 510640, China

3. School of Instrument and Electronics, North University of China, Shanxi 030051, China

Funder

Guangdong Key Laboratory of Fuel Cell Technology

Key Laboratories of Sensing and Application of Intelligent Optoelectronic System in Sichuan Provincial Universities

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c07418

Reference60 articles.

1. InP Nanowire Biosensor with Tailored Biofunctionalization: Ultrasensitive and Highly Selective Disease Biomarker Detection

2. Conductometric Sensing with Individual InAs Nanowires

3. Vertically-stacked gate-all-around polysilicon nanowire FETs with sub-μm gates patterned by nanostencil lithography

4. A 3-D-Silicon Nanowire FET Biosensor Based on a Novel Hybrid Process

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