Solvent Vapor Annealing of Ferroelectric P(VDF-TrFE) Thin Films
Author:
Affiliation:
1. Department of Materials Science, Fudan University, Shanghai 200433, China
2. School Microelectronics, Fudan University, Shanghai 200433, China
Funder
Fudan University
Ministry of Science and Technology of the People's Republic of China
Science and Technology Commission of Shanghai Municipality
National Natural Science Foundation of China
China Academy of Engineering Physics
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/am5055299
Reference21 articles.
1. Regular arrays of highly ordered ferroelectric polymer nanostructures for non-volatile low-voltage memories
2. Organic Nonvolatile Memory Devices Based on Ferroelectricity
3. Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics
4. High Performance and Stable N-Channel Organic Field-Effect Transistors by Patterned Solvent-Vapor Annealing
5. Self-assembly of discotic molecules into mesoscopic crystals by solvent-vapour annealing
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