High Performance and Stable N-Channel Organic Field-Effect Transistors by Patterned Solvent-Vapor Annealing-Reference-Cited by-同舟云学术

High Performance and Stable N-Channel Organic Field-Effect Transistors by Patterned Solvent-Vapor Annealing

Published:2013-11-01 Issue:21 Volume:5 Page:10745-10752
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Khim Dongyoon¹,Baeg Kang-Jun²,Kim Juhwan¹,Kang Minji¹,Lee Seung-Hoon¹,Chen Zhihua³,Facchetti Antonio³,Kim Dong-Yu¹,Noh Yong-Young⁴

Affiliation:

1. Heeger Center for Advanced Materials, School of Materials Science and Engineering, Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea

2. Nano Carbon Materials Research Group, Korea Electrotechnology Research Institute (KERI), 12, Bulmosan-ro 10beon-gil, Seongsan-gu, Changwon, Gyeongsangnam-do 642-120, Republic of Korea

3. Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, United States

4. Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3 ga, Jung-gu, Seoul 100-715, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am4029075

Reference48 articles.

1. Device Physics of Solution-Processed Organic Field-Effect Transistors

2. π-Conjugated Polymers for Organic Electronics and Photovoltaic Cell Applications

3. Organic Electronic Materials