ALD Growth Characteristics of ZnS Films Deposited from Organozinc and Hydrogen Sulfide Precursors
Author:
Affiliation:
1. Department of Chemistry, University of Eastern Finland, P.O. Box 111, FI-80101 Joensuu, Finland
2. Department of Chemical Engineering, Stanford University, 381 North-South Mall, Stanford, California 94306-5025
Publisher
American Chemical Society (ACS)
Subject
Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/la101128w
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