Growth, Structure, and Electronic Properties of Epitaxial Bismuth Telluride Topological Insulator Films on BaF2 (111) Substrates-Reference-Cited by-同舟云学术

Growth, Structure, and Electronic Properties of Epitaxial Bismuth Telluride Topological Insulator Films on BaF2 (111) Substrates

Published:2013-07-12 Issue:8 Volume:13 Page:3365-3373
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Caha O.¹,Dubroka A.¹,Humlíček J.¹,Holý V.²,Steiner H.³,Ul-Hassan M.³,Sánchez-Barriga J.⁴,Rader O.⁴,Stanislavchuk T. N.⁵,Sirenko A. A.⁵,Bauer G.³,Springholz G.³

Affiliation:

1. Department of Condensed Matter Physics and CEITEC, Masaryk University, Kotlářská 2, 61137 Brno, Czech Republic

2. Department of Electronic Structures, Charles University, Praha, Czech Republic

3. Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität, Altenbergerstrasse 69, 4040 Linz, Austria

4. Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Straße 15, 12489 Berlin, Germany

5. Department of Physics, New Jersey Institute of Technology, Newark, New Jersey 07102, United States

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg400048g

Reference54 articles.

1. Colloquium: Topological insulators

2. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

3. Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States inBi2Te3andSb2Te3

4. Quantum Oscillations and Hall Anomaly of Surface States in the Topological Insulator Bi 2 Te 3

5. Topological insulators and superconductors

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