Characterizing the Metal–SAM Interface in Tunneling Junctions-Reference-Cited by-同舟云学术

Characterizing the Metal–SAM Interface in Tunneling Junctions

Published:2015-01-26 Issue:2 Volume:9 Page:1471-1477
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Bowers Carleen M.¹,Liao Kung-Ching¹,Zaba Tomasz²,Rappoport Dmitrij¹,Baghbanzadeh Mostafa¹,Breiten Benjamin¹,Krzykawska Anna²,Cyganik Piotr²,Whitesides George M.¹³

Affiliation:

1. Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, United States

2. Smoluchowski Institute of Physics, Jagiellonian University, Lojasiewicza 11, 30-348 Krakow, Poland

3. Kavli Institute for Bionano Science & Technology, School of Engineering and Applied Sciences, Harvard University, Cambridge, 29 Oxford Street, Massachusetts 02138, United States

Funder

U.S. Department of Energy

Narodowym Centrum Nauki

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn5059216

Reference48 articles.

1. Controlling Leakage Currents: The Role of the Binding Group and Purity of the Precursors for Self-Assembled Monolayers in the Performance of Molecular Diodes

2. The role of van der Waals forces in the performance of molecular diodes