Influence of an Atom in EGaIn/Ga2O3 Tunneling Junctions Comprising Self-Assembled Monolayers-Reference-Cited by-同舟云学术

Influence of an Atom in EGaIn/Ga2O3 Tunneling Junctions Comprising Self-Assembled Monolayers

Published:2013-05-17 Issue:21 Volume:117 Page:11367-11376
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Fracasso Davide¹,Muglali Mutlu Iskender²,Rohwerder Michael²,Terfort Andreas³,Chiechi Ryan C.¹

Affiliation:

1. Stratingh Institute for Chemistry and Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands

2. Max-Planck-Institut für Einsenforschung GmbH, Max-Planck-Straße 1, 40237 Düsseldorf, Germany

3. Institut für Anorganische und Analytische Chemie, Goethe-Universität Frankfurt, Max-von-Laue-Straße 7, 60438 Frankfurt, Germany

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp401703p

Reference62 articles.

1. Si/SiO2-Templated Formation of Ultraflat Metal Surfaces on Glass, Polymer, and Solder Supports: Their Use as Substrates for Self-Assembled Monolayers

2. The Genesis of Molecular Electronics

3. Self-Assembled Monolayers of Thiolates on Metals as a Form of Nanotechnology

4. Measuring Molecular Junctions: What Is the Standard?

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