Lateral Enlargement Growth Mechanism of 3C-SiC on Off-Oriented 4H-SiC Substrates-Reference-Cited by-同舟云学术

Lateral Enlargement Growth Mechanism of 3C-SiC on Off-Oriented 4H-SiC Substrates

Published:2014-11-03 Issue:12 Volume:14 Page:6514-6520
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Jokubavicius Valdas¹,Yazdi G. Reza¹,Liljedahl Rickard¹,Ivanov Ivan G.¹,Yakimova Rositsa¹,Syväjärvi Mikael¹

Affiliation:

1. Department of Physics, Chemistry and Biology (IFM), Semiconductor Materials Division, Linköping University, 581 83 Linköping, Sweden

Funder

The Swedish Energy Agency

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg501424e

Reference33 articles.

1. The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide

2. Fabrication and Characterization of 3C-SiC-Based MOSFETs

3. The impurity photovoltaic (IPV) effect in wide-bandgap semiconductors: an opportunity for very-high-efficiency solar cells?

4. Richards, B. S.; Lambertz, A.; Corkish, R. P.; Zorman, C. A.; Mehregany, M.; Ionescu, M.; Green, M. A.Proceedings of 3rd World Conference on Photovoltaic Energy Conversion; May 11–18, 2003, Osaka, Japan;WCPEC-3 Organizing Committee, 2003; Vol.3, p2738.

5. Single-Crystal Silicon Carbide: A Biocompatible and Hemocompatible Semiconductor for Advanced Biomedical Applications

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