Role of Molecular Surface Passivation in Electrical Transport Properties of InAs Nanowires-Reference-Cited by-同舟云学术

Role of Molecular Surface Passivation in Electrical Transport Properties of InAs Nanowires

Published:2007-12-04 Issue:1 Volume:8 Page:49-55
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Hang Qingling¹,Wang Fudong¹,Carpenter Patrick D.¹,Zemlyanov Dmitri¹,Zakharov Dmitri¹,Stach Eric A.¹,Buhro William E.¹,Janes David B.¹

Affiliation:

1. Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, and Department of Chemistry and Center for Materials Innovation, Washington University, St. Louis, Missouri 63130

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl071888t

Reference34 articles.

1. Tunable Supercurrent Through Semiconductor Nanowires

2. Superconducting Proximity Effect in the Native Inversion Layer on InAs

3. Single‐crystaln‐InAs coupled Josephson junction

4. n‐InAs/GaAs heterostructure superconducting weak links with Nb electrodes

5. Electrical Manipulation of Magnetization Reversal in a Ferromagnetic Semiconductor

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