Radio Frequency and Linearity Performance of Transistors Using High-Purity Semiconducting Carbon Nanotubes-Reference-Cited by-同舟云学术

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Radio Frequency and Linearity Performance of Transistors Using High-Purity Semiconducting Carbon Nanotubes

Published:2011-04-25 Issue:5 Volume:5 Page:4169-4176
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Wang Chuan¹,Badmaev Alexander¹,Jooyaie Alborz²,Bao Mingqiang³,Wang Kang L.³,Galatsis Kosmas²,Zhou Chongwu¹

Affiliation:

1. Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, United States

2. Aneeve Nanotechnologies LLC, UCLA California Nanosystems Institute, Los Angeles, California 90095, United States

3. Department of Electrical Engineering, University of California, Los Angeles, California 90095, United States

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn200919v

Reference28 articles.

1. Extraordinary Mobility in Semiconducting Carbon Nanotubes

2. Ballistic carbon nanotube field-effect transistors

3. Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays

4. Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics

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