Equilibrium Shape Diagram for Strained Ge Nanocrystals on Si(001)
Author:
Affiliation:
1. Hewlett-Packard Laboratories, 3500 Deer Creek Road, MS 26U-12, Palo Alto, California 94304-1392
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/jp983604m
Reference26 articles.
1. Phänomenologische Theorie der Kristallabscheidung an Oberflächen. I
2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
3. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
4. STM study of the Ge growth mode on Si(001) substrates
5. Microstructural evolution during the heteroepitaxy of Ge on vicinal Si(100)
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