Impact of Soft Annealing on the Performance of Solution-Processed Amorphous Zinc Tin Oxide Thin-Film Transistors-Reference-Cited by-同舟云学术

Impact of Soft Annealing on the Performance of Solution-Processed Amorphous Zinc Tin Oxide Thin-Film Transistors

Published:2013-04-18 Issue:9 Volume:5 Page:3587-3590
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Nayak Pradipta K.¹,Hedhili Mohamed N.¹,Cha Dongkyu¹,Alshareef H. N.¹

Affiliation:

1. Materials Science and Engineering and ‡Imaging and Characterization Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am303235z

Reference27 articles.

1. High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature

2. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

3. High-mobility amorphous In2O3–10wt%ZnO thin film transistors

4. High-Performance Flexible Transparent Thin-Film Transistors Using a Hybrid Gate Dielectric and an Amorphous Zinc Indium Tin Oxide Channel

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