The Influence of InxGa1–xAs and GaAs1–yPy Layers Surrounding the AlAs Release Layer in the Epitaxial Lift-Off Process
Author:
Affiliation:
1. Applied Materials Science, Institute for Molecules and Materials, Radboud University Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, The Netherlands
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cg0700061
Reference44 articles.
1. Epitaxial lift-off GaAs solar cell from a reusable GaAs substrate
2. Process damage free thin-film GaAs solar cells by epitaxial liftoff with GaInP window layer
3. High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
4. High‐Speed GaAs Epitaxial Lift‐Off and Bonding with High Alignment Accuracy Using a Sapphire Plate
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