Epitaxial lift-off GaAs solar cell from a reusable GaAs substrate-Reference-Cited by-同舟云学术

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Epitaxial lift-off GaAs solar cell from a reusable GaAs substrate

Published:1997-03 Issue:1-3 Volume:45 Page:162-171
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

van Geelen A.,Hageman P.R.,Bauhuis G.J.,van Rijsingen P.C.,Schmidt P.,Giling L.J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference51 articles.

1. Gallium arsenide and other compound semiconductors on silicon

2. Low dislocation density GaAs on Si heteroepitaxy with atomic hydrogen irradiation for optoelectronic integration

3. III–V on Si: heteroepitaxy versus lift-off techniques

4. Direct bonding of GaAs films on silicon circuits by epitaxial liftoff

5. Microsecond lifetimes and low interface recombination velocities in moderately dopedn‐GaAs thin films

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1. Flexible Epitaxial Lift‐Off InGaP/GaAs/InGaAs Triple‐Junction Solar Cells Integrated with Micro/Nanostructured Polymer Film;Solar RRL;2024-08

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3. 24% Single‐Junction GaAs Solar Cell Grown Directly on Growth‐Planarized Facets Using Hydride Vapor Phase Epitaxy;Advanced Energy Materials;2023-12-03

4. High‐Efficiency GaAs Solar Cells Grown on Porous Germanium Substrate with PEELER Technology;Solar RRL;2023-11-23

5. III–V Thin Films for Flexible, Cost-Effective, and Emerging Applications in Optoelectronics and Photonics;Accounts of Materials Research;2023-11-15

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