Theoretical Study of AlnNn, GanNn, and InnNn (n = 4, 5, 6) Clusters
Author:
Affiliation:
1. Department of Physics, Michigan Technological University, Houghton, Michigan 49931
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/jp0140062
Reference26 articles.
1. Application of aluminum nitride films for electronic devices
2. The Chemical Vapor Deposition of Aluminum Nitride: Unusual Cluster Formation in the Gas Phase
3. H2GaN3 and Derivatives: A Facile Method to Gallium Nitride
4. Theoretical spectrum of AlN
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