H2GaN3 and Derivatives: A Facile Method to Gallium Nitride
Author:
Affiliation:
1. Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604
2. Department of Chemistry and Biochemistry, Utah State University, Logan, Utah 84322-0300
Publisher
American Chemical Society (ACS)
Subject
Inorganic Chemistry,Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/ic981022d
Reference18 articles.
1. Growth of Group III Nitrides. A Review of Precursors and Techniques
2. Chemical approaches to the Metalorganic CVD of Group-III Nitrides
3. Topochemical Control in the Solid-State Conversion of Cyclotrigallazane into Nanocrystalline Gallium Nitride
4. Chemical vapor deposition of gallium nitride from diethylgallium azide
5. An Alternative Synthesis of Cyclotrigallazane, [H2GaNH2]3, a Precursor to Nanocrystalline, Phase-Inhomogeneous Gallium Nitride, GaN
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1. DFT Study of Cluster Size-Dependent Structures and Properties of (HClGaN3)n (n = 1–6) Clusters;Russian Journal of Physical Chemistry A;2021-04
2. Theoretical Prediction of Size-Dependent Structures and Properties for the Asymmetric Clusters (HBrInN3)n (n = 1–6);Science of Advanced Materials;2018-11-01
3. DFT Calculations of Structure and Properties of Asymmetric Clusters (HClInN3)n (n = 1–6);Russian Journal of Physical Chemistry A;2018-07-31
4. A Systematic Search for Structures and Stabilities of Asymmetric Clusters (HfInN3) n (n = 1-6);Journal of Structural Chemistry;2018-01
5. The M12N12(M = Al, Ga) clusters as potential sensors for NO, NO2and HCN detection;Materials Research Express;2017-01-24
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