Facile Fabrication of Free-Standing Light Emitting Diode by Combination of Wet Chemical Etchings-Reference-Cited by-同舟云学术

Facile Fabrication of Free-Standing Light Emitting Diode by Combination of Wet Chemical Etchings

Published:2014-01-06 Issue:2 Volume:6 Page:985-989
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Jang Lee-Woon¹,Jeon Dae-Woo¹,Chung Tae-Hoon²,Polyakov Alexander Y.³,Cho Han-Su¹,Yun Jin-Hyeon¹,Ju Jin-Woo²,Baek Jong-Hyeob²,Choi Joo-Won⁴,Lee In-Hwan¹

Affiliation:

1. School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756, Korea

2. LED Device Research Center, Korea Photonics Technology Institute, Gwangju 500-779, Korea

3. Institue of Rare Metals, B. Tolmachevsky, 5, Moscow, 119017, Russia

4. Device R&D Team, Seoul OptoDevice Co., Gyeonggi 425-851, Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am404285s

Reference32 articles.

1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

2. Piezoelectric GaN sensor structures

3. Terahertz response of GaN thin films

4. The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

5. Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Significantly Increased Luminescence Properties of the Wafer-Scale Mesoporous GaN-Based LEDs with Mesoporous GaN-Distributed Bragg Reflectors;Crystal Growth & Design;2024-02-26

2. Atomic layer deposition technology for the development of high-quality, full-colour micro-LED displays;Next Nanotechnology;2024

3. Preparation and Increased Optical Properties of Large-Area AlInGaN LEDs with Mesoporous AlGaN-Distributed Bragg Reflectors;Crystal Growth & Design;2023-08-08

4. The development and applications of nanoporous gallium nitride in optoelectronics: a review;Semiconductor Science and Technology;2023-05-25

5. Preparation and enhanced photocatalytic properties of the large-area transferred mesoporous InGaN-based MQWs with mesoporous GaN reﬂectors;Colloids and Surfaces A: Physicochemical and Engineering Aspects;2022-12