Significantly Increased Luminescence Properties of the Wafer-Scale Mesoporous GaN-Based LEDs with Mesoporous GaN-Distributed Bragg Reflectors

Author:

Cao Dezhong123ORCID,Yan Xiaodong13,Sun Kunxiao13,Wang He13,Guo Zhengquan13,Li Xing13,Wang Feifei13,Diwu Yuxuan13,Luo Tiantian13,Lu Dingze13ORCID,Xia Caijuan13,Cheng Pengfei13,Li Lianbi13,Feng Ningning13,Ma Xiaohua2,Hao Yue2

Affiliation:

1. School of Science, Xi’an Polytechnic University, Xi’an 710048, P.R. China

2. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronic, Xidian University, Xi’an 710071, P.R. China

3. Xi’an Key Laboratory of Nuclear Protection Textile Equipment Technology & Engineering Research Center of Flexible Radiation Protection Technology of Universities of Shaanxi Province, Xi’an Polytechnic University, Xi’an 710048, P.R. China

Funder

Postdoctoral Research Foundation of China

Shaanxi Province Innovative Talent Promotion Plan-Young Science and Technology Star

Deputy General Project of Science and Technology of Jiangsu Province, China

Xi'an Beilin District Science and Technology Planning Project

Scientific Research Project of Shaanxi Provincial Department of Education, China

Basic Research Program of Natural Science of Shaanxi Province, China

Innovation and Entrepreneurship Training program for College students, China

Publisher

American Chemical Society (ACS)

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