Seamless Interfacial Formation by Solution-Processed Amorphous Hydroxide Semiconductor for Highly Efficient Electron Transport-Reference-Cited by-同舟云学术

Seamless Interfacial Formation by Solution-Processed Amorphous Hydroxide Semiconductor for Highly Efficient Electron Transport

Published:2018-08-27 Issue:9 Volume:1 Page:4564-4571
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Yang Shuzhang¹,Song Xuezhi¹^ORCID,Gao Liguo¹^ORCID,Wang Ning¹,Ding Xiaogang¹,Wang Shufeng²,Ma Tingli³

Affiliation:

1. State Key Laboratory of Fine Chemicals, School of Petroleum and Chemical Engineering, Dalian University of Technology, Panjin, 124221, China

2. Department of Physics, Peking University, Beijing 100871, China

3. Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2−4 Hibikino, Wakamatsu, Kitakyushu, Fukuoka 808-0196, Japan

Funder

Ministry of Education of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.8b00681

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5. Iodide management in formamidinium-lead-halide–based perovskite layers for efficient solar cells

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