Ab Initio and Topological Study of Interactions between SiH4-nXn (n = 0−3, X = F and Cl) and BH3
Author:
Affiliation:
1. Department of Applied Chemistry, College of Chemistry and Molecular Engineering, Peking University, Beijing, China 100871
Publisher
American Chemical Society (ACS)
Subject
Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/jp0260292
Reference44 articles.
1. Self-limiting adsorption of thermally cracked SiCl2H2 on Si surfaces
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4. Expression for the growth rate of selective epitaxial growth of silicon using dichlorosilane, hydrogen chloride, and hydrogen in a low pressure chemical vapor deposition pancake reactor
5. A chemical mechanism for in situ boron doping during silicon chemical vapor deposition
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1. Microscopic and Macroscopic Characterization of Organosilane-Functionalized Nanocrystalline NaZSM-5;Langmuir;2005-06-23
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