Intraband Absorption in Self-Assembled Ge-Doped GaN/AlN Nanowire Heterostructures-Reference-Cited by-同舟云学术

Intraband Absorption in Self-Assembled Ge-Doped GaN/AlN Nanowire Heterostructures

Author:

Beeler M.¹,Hille P.²,Schörmann J.²,Teubert J.²,de la Mata M.³,Arbiol J.³⁴,Eickhoff M.²,Monroy E.¹

Affiliation:

1. CEA-CNRS Group Nanophysics and Semiconductors, CEA/INAC/SP2M and CNRS-Institute Néel, 17 rue des Martyrs, 38054 Grenoble cedex 9, France

2. I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, D-35392 Gießen, Germany

3. Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC, Campus de la UAB, 08193 Barcelona, Catalonia, Spain

4. Institucio Catalana de Recerca i Estudis Avançats (ICREA), 08010 Barcelona, Catalonia, Spain

Funder

European Research Council

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

Reference67 articles.

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

2. Inter Sub‐band Devices;Group III‐Nitride Semiconductor Optoelectronics;2023-10-18