Extending Reaction Mechanism Generator to Silicon Hydride Chemistry-Reference-Cited by-同舟云学术

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Extending Reaction Mechanism Generator to Silicon Hydride Chemistry

Published:2016-12-05 Issue:49 Volume:55 Page:12507-12515
ISSN:0888-5885
Container-title:Industrial & Engineering Chemistry Research
language:en
Short-container-title:Ind. Eng. Chem. Res.

Author:

Slakman Belinda L.¹,Simka Harsono²,Reddy Harinath³,West Richard H.¹

Affiliation:

1. Department of Chemical Engineering, Northeastern University, Boston, Massachusetts 02115, United States

2. TCAD, Logic Technology Development, Intel Corporation, Santa Clara, California 95054, United States

3. TCAD, Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124, United States

Funder

Intel Corporation

Department of Chemical Engineering, Northeastern University, Boston

Publisher

American Chemical Society (ACS)

Subject

Industrial and Manufacturing Engineering,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.iecr.6b02402

Reference46 articles.

1. A Mathematical Model of the Fluid Mechanics and Gas‐Phase Chemistry in a Rotating Disk Chemical Vapor Deposition Reactor

2. Gas‐phase kinetics in the atmospheric pressure chemical vapor deposition of silicon from silane and disilane

3. Laser-Induced Fluorescence Measurements and Kinetic Analysis of Si Atom Formation in a Rotating Disk Chemical Vapor Deposition Reactor

4. Rate constants of reactions involving SiH4as an association product from quantum Rice–Ramsperger–Kassel calculations

5. Pressure-dependent rate coefficients of chemical reactions involving Si2H4 isomerization from QRRK calculations

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