Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene-Reference-Cited by-同舟云学术

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Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene

Published:2010-08-04 Issue:9 Volume:10 Page:3312-3317
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Xu Guangyu¹,Torres Carlos M.¹,Zhang Yuegang²,Liu Fei³,Song Emil B.¹,Wang Minsheng¹,Zhou Yi¹,Zeng Caifu¹,Wang Kang L.¹

Affiliation:

1. Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095

2. Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720

3. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl100985z

Reference39 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

3. Approaching ballistic transport in suspended graphene

4. High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides

5. Operation of Graphene Transistors at Gigahertz Frequencies

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4. Origin of electrical noise near charge neutrality in dual gated graphene device;Applied Physics Letters;2023-09-18

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