Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes-Reference-Cited by-同舟云学术

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Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes

Published:2014-12-22 Issue:1 Volume:9 Page:869-877
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Leong Wei Sun¹,Luo Xin²³,Li Yida¹,Khoo Khoong Hong²³,Quek Su Ying²,Thong John T. L.¹

Affiliation:

1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583

2. Department of Physics, Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore 117546

3. Institute of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632

Funder

Faculty of Engineering, National University of Singapore

National Research Foundation-Prime Minister's office, Republic of Singapore

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn506567r

Reference32 articles.

1. How Good Can Monolayer MoS2 Transistors Be?

2. Single-layer MoS2 transistors

3. High Performance Multilayer MoS2 Transistors with Scandium Contacts

4. Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium

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1. Tuning the Schottky barrier height in single- and bi-layer graphene-inserted MoS2/metal contacts;Scientific Reports;2024-09-08

2. Influence of High-κ Dielectrics Integration on ALD-Based MoS₂ Field-Effect Transistor Performance;ACS Applied Nano Materials;2024-08-12

3. Electronic and optical properties and electrocatalytic water splitting in a graphene/MoS2 heterojunction;Physica B: Condensed Matter;2024-07

4. Impact of MoS₂ Monolayers on the Thermoelastic Response of Silicon Heterostructures;ACS Applied Nano Materials;2024-07-01

5. Electronic Devices Based on Heterostructures of 2D Materials and Self‐Assembled Monolayers;Small;2024-06-27

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