Controlled Generation of a p–n Junction in a Waveguide Integrated Graphene Photodetector-Reference-Cited by-同舟云学术

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Controlled Generation of a p–n Junction in a Waveguide Integrated Graphene Photodetector

Published:2016-10-11 Issue:11 Volume:16 Page:7107-7112
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Schuler Simone¹,Schall Daniel²,Neumaier Daniel²,Dobusch Lukas¹,Bethge Ole³,Schwarz Benedikt³,Krall Michael¹,Mueller Thomas¹

Affiliation:

1. Institute of Photonics, Vienna University of Technology, Gußhausstraße 27-29, 1040 Vienna, Austria

2. AMO GmbH, Otto-Blumenthal-Straße 25, 52074 Aachen, Germany

3. Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7, 1040 Vienna, Austria

Funder

Austrian Science Fund

Horizon 2020

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b03374

Reference43 articles.

1. High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform

2. Ultra-low capacitance and high speed germanium photodetectors on silicon

3. InP/InGaAs uni-travelling-carrier photodiode with 220 GHz bandwidth

4. Hybrid Integrated Platforms for Silicon Photonics

5. High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide

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