Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge–Si Core–Shell Nanowires-Reference-Cited by-同舟云学术

Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge–Si Core–Shell Nanowires

Published:2017-02-28 Issue:4 Volume:17 Page:2259-2264
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Conesa-Boj S.¹²,Li A.¹²,Koelling S.²^ORCID,Brauns M.³,Ridderbos J.³,Nguyen T. T.³,Verheijen M. A.¹⁴,Koenraad P. M.²,Zwanenburg F. A.³,Bakkers E. P. A. M.¹²^ORCID

Affiliation:

1. Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands

2. Department of Applied Physics, TU Eindhoven, Den Dolech 2, 5612 AZ Eindhoven, The Netherlands

3. NanoElectronics Group, MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands

4. Philips Innovation Services Eindhoven, High Tech Campus 11, 5656 AE Eindhoven, The Netherlands

Funder

Stichting voor Fundamenteel Onderzoek der Materie

H2020 European Research Council

Seventh Framework Programme

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

http://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b04891

Reference30 articles.

1. Performance Analysis of a Ge/Si Core/Shell Nanowire Field-Effect Transistor

2. Electronic properties of strained Si/Ge core-shell nanowires

3. Reduced quantum confinement effect and electron-hole separation in SiGe nanowires

4. Quantum confinement effect in Si/Ge core-shell nanowires: First-principles calculations

5. Plastic and Elastic Strain Fields in GaAs/Si Core–Shell Nanowires

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