Surface Properties from Transconductance in Nanoscale Systems-Reference-Cited by-同舟云学术

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Surface Properties from Transconductance in Nanoscale Systems

Published:2016-09-07 Issue:10 Volume:16 Page:6028-6035
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Lynall David¹²,Byrne Kristopher¹²,Shik Alexander¹²,Nair Selvakumar V.¹²,Ruda Harry E.¹²³

Affiliation:

1. Centre for Advanced Nanotechnology, University of Toronto, 170 College Street, Toronto, Ontario M5S 3E4, Canada

2. Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario M5S 3E4, Canada

3. Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b01800

Reference30 articles.

1. Nanowire electronic and optoelectronic devices

2. Vertical high-mobility wrap-gated InAs nanowire transistor

3. High Electron Mobility InAs Nanowire Field-Effect Transistors

4. Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors

5. Gas Detection with Vertical InAs Nanowire Arrays

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1. Photoconductivity of Nanowire Systems;Photoconductivity and Photoconductive Materials;2022-06-17

2. Ion sensitivity from current hysteresis in InAs nanowire field-effect transistors functionalized with ionophore-doped fluorosilicone membranes;Sensors and Actuators B: Chemical;2021-06

3. Rethinking the Characterization of Nanoscale Field‐Effect Transistors: A Universal Approach;Small;2020-05-06

4. Nonlinear Chemical Sensitivity Enhancement of Nanowires in the Ultralow Concentration Regime;ACS Nano;2020-01-06

5. Suppressing the excess OFF-state current of short-channel InAs nanowire field-effect transistors by nanoscale partial-gate;Nanotechnology;2018-08-09

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