Revealing the Electronic Structure of Silicon Intercalated Armchair Graphene Nanoribbons by Scanning Tunneling Spectroscopy-Reference-Cited by-同舟云学术

Revealing the Electronic Structure of Silicon Intercalated Armchair Graphene Nanoribbons by Scanning Tunneling Spectroscopy

Published:2017-03-21 Issue:4 Volume:17 Page:2197-2203
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Deniz Okan¹^ORCID,Sánchez-Sánchez Carlos¹^ORCID,Dumslaff Tim²,Feng Xinliang³,Narita Akimitsu²^ORCID,Müllen Klaus²^ORCID,Kharche Neerav⁴,Meunier Vincent⁴,Fasel Roman¹⁵,Ruffieux Pascal¹^ORCID

Affiliation:

1. Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland

2. Max Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany

3. Chair of Molecular Functional Materials, Department of Chemistry and Food Chemistry, Technische Universität Dresden, Mommsenstrasse 4, D-01062 Dresden, Germany

4. Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, United States

5. Department of Chemistry and Biochemistry, University of Bern, Freiestrasse 3, CH-3012 Bern, Switzerland

Funder

Consejo Superior de Investigaciones Cient?ficas

Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung

Office of Naval Research

European Investment Bank

Seventh Framework Programme

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b04727

Reference44 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect

3. Gate-induced insulating state in bilayer graphene devices

4. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

5. Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

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