Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam-Reference-Cited by-同舟云学术

Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam

Published:2016-05-09 Issue:6 Volume:16 Page:3788-3794
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Katagiri Y.,Nakamura T.¹,Ishii A.,Ohata C.,Hasegawa M.,Katsumoto S.¹,Cusati T.²,Fortunelli A.³,Iannaccone G.²,Fiori G.²,Roche S.⁴⁵,Haruyama J.

Affiliation:

1. Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan

2. Dipartimento di Ingegneria dell’Informazione, Università di Pisa, Via G. Caruso, 16, Pisa 56122, Italy

3. CNR-ICCOM, via Giuseppe Moruzzi 1, 56124 Pisa, Italy

4. Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain

5. ICREA, Institució Catalana de Recerca i Estudis Avançats, 08070 Barcelona, Spain

Funder

Ministry of Education, Culture, Sports, Science, and Technology

Ministerio de Economía y Competitividad

Air Force Office of Scientific Research

Seventh Framework Programme

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b01186

Reference44 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Van der Waals heterostructures

3. Field-Effect Transistors Built from All Two-Dimensional Material Components

4. Black phosphorus field-effect transistors

5. Phosphorus joins the family

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