Room-Temperature Skyrmion Shift Device for Memory Application-Reference-Cited by-同舟云学术

Room-Temperature Skyrmion Shift Device for Memory Application

Published:2016-12-19 Issue:1 Volume:17 Page:261-268
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Yu Guoqiang¹^ORCID,Upadhyaya Pramey¹,Shao Qiming¹^ORCID,Wu Hao²,Yin Gen¹,Li Xiang¹,He Congli,Jiang Wanjun³⁴,Han Xiufeng²,Amiri Pedram Khalili¹,Wang Kang L.¹

Affiliation:

1. Department of Electrical Engineering, University of California, Los Angeles, California 90095, United States

2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

3. State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China

4. Collaborative Innovation Center of Quantum Matter, Beijing 100084, China

Funder

Defense Advanced Research Projects Agency

Basic Energy Sciences

Microelectronics Advanced Research Corporation

Division of Engineering Education and Centers

Division of Electrical, Communications and Cyber Systems

King Abdulaziz City for Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b04010

Reference43 articles.

1. Skyrmions on the track

2. Topological properties and dynamics of magnetic skyrmions

3. Spin Transfer Torques in MnSi at Ultralow Current Densities

4. A strategy for the design of skyrmion racetrack memories

5. Skyrmion-skyrmion and skyrmion-edge repulsions in skyrmion-based racetrack memory

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