Electron Interference in Hall Effect Measurements on GaAs/InAs Core/Shell Nanowires
Author:
Affiliation:
1. Peter Grünberg Institute 9, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
2. Jülich Aachen Research Alliance, Fundamentals of Future Information Technology (JARA-FIT), 52425 Jülich, Germany
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b03611
Reference34 articles.
1. A General Method To Measure the Hall Effect in Nanowires: Examples of FeS2 and MnSi
2. Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires
3. Flux periodic magnetoconductance oscillations in GaAs/InAs core/shell nanowires
4. Angle-dependent magnetotransport in GaAs/InAs core/shell nanowires
5. Transport properties of InAs nanowire field effect transistors: The effects of surface states
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