Tuning Carrier Tunneling in van der Waals Heterostructures for Ultrahigh Detectivity-Reference-Cited by-同舟云学术

Tuning Carrier Tunneling in van der Waals Heterostructures for Ultrahigh Detectivity

Published:2016-12-20 Issue:1 Volume:17 Page:453-459
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Vu Quoc An¹,Lee Jin Hee¹^ORCID,Nguyen Van Luan¹,Shin Yong Seon,Lim Seong Chu¹^ORCID,Lee Kiyoung²,Heo Jinseong²,Park Seongjun²,Kim Kunnyun³,Lee Young Hee¹,Yu Woo Jong^ORCID

Affiliation:

1. Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Korea

2. Samsung Advanced Institute of Technology, Suwon, 16678, Korea

3. Korea Electronics Technology Institute, Seongnam, 13509, Republic of Korea

Funder

National Research Foundation of Korea

Korea Institute of Energy Technology Evaluation and Planning

Korea Evaluation Institute of Industrial Technology

Institute for Basic Science

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b04449

Reference36 articles.

1. Van der Waals heterostructures

2. Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

3. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

4. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

5. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

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