Hexagonal Boron Nitride Synthesized at Atmospheric Pressure Using Metal Alloy Solvents: Evaluation as a Substrate for 2D Materials
Author:
Affiliation:
1. Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
2. National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
Funder
Core Research for Evolutional Science and Technology
Japan Society for the Promotion of Science
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.9b04641
Reference39 articles.
1. Hexagonal boron nitride is an indirect bandgap semiconductor
2. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal
3. Disorder in van der Waals heterostructures of 2D materials
4. Electrical Spin Injection into Graphene through Monolayer Hexagonal Boron Nitride
5. Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers
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