Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP–InP Core

Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP–InP Core–Shell Nanowires

Published:2019-03-25 Issue:4 Volume:19 Page:2674-2681
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Göransson D. J. O.¹,Borgström M. T.¹^ORCID,Huang Y. Q.²,Messing M. E.¹,Hessman D.¹^ORCID,Buyanova I. A.²,Chen W. M.²,Xu H. Q.¹³⁴^ORCID

Affiliation:

1. NanoLund and Division of Solid State Physics, Lund University, Box 118, S-22100 Lund, Sweden

2. Department of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping, Sweden

3. Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, China

4. Beijing Academy of Quantum Information Sciences, West Bld. #3, No.10 Xibeiwang East Rd., Haidian District, Beijing 100193, China

Funder

National Natural Science Foundation of China

Vetenskapsr?det

Ministry of Science and Technology of the People's Republic of China

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.9b00644

Reference52 articles.

1. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

2. Room-Temperature Ultraviolet Nanowire Nanolasers

3. Logic Gates and Computation from Assembled Nanowire Building Blocks

4. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

5. Epitaxial core–shell and core–multishell nanowire heterostructures

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