Experimental Observation of the Gate-Controlled Reversal of the Anomalous Hall Effect in the Intrinsic Magnetic Topological Insulator MnBi2Te4 Device-Reference-Cited by-全球学者库

Experimental Observation of the Gate-Controlled Reversal of the Anomalous Hall Effect in the Intrinsic Magnetic Topological Insulator MnBi2Te4 Device

Published:2019-12-16 Issue:1 Volume:20 Page:709-714
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Zhang Shuai¹,Wang Rui¹²,Wang Xuepeng¹,Wei Boyuan¹,Chen Bo¹,Wang Huaiqiang¹,Shi Gang³,Wang Feng¹,Jia Bin¹,Ouyang Yiping¹,Xie Faji¹,Fei Fucong¹,Zhang Minhao¹,Wang Xuefeng⁴^ORCID,Wu Di¹,Wan Xiangang¹,Song Fengqi¹^ORCID,Zhang Haijun¹,Wang Baigeng¹

Affiliation:

1. National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China

2. Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China

3. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

4. National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.9b04555

Reference39 articles.

1. Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator

2. Trajectory of the anomalous Hall effect towards the quantized state in a ferromagnetic topological insulator

3. High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator