Freestanding Oxide Ferroelectric Tunnel Junction Memories Transferred onto Silicon-Reference-Cited by-同舟云学术

Freestanding Oxide Ferroelectric Tunnel Junction Memories Transferred onto Silicon

Author:

Lu Di¹^ORCID,Crossley Sam²,Xu Ruijuan²³^ORCID,Hikita Yasuyuki³,Hwang Harold Y.²³

Affiliation:

1. Department of Physics, Stanford University, Stanford, California 94305, United States

2. Department of Applied Physics, Stanford University, Stanford, California 94305, United States

3. Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States

Funder

Gordon and Betty Moore Foundation

Air Force Office of Scientific Research

Stanford University

U.S. Department of Energy

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

Reference28 articles.

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