Band Filling and Cross Quantum Capacitance in Ion-Gated Semiconducting Transition Metal Dichalcogenide Monolayers-Reference-Cited by-同舟云学术

Band Filling and Cross Quantum Capacitance in Ion-Gated Semiconducting Transition Metal Dichalcogenide Monolayers

Author:

Zhang Haijing¹²^ORCID,Berthod Christophe¹,Berger Helmuth³,Giamarchi Thierry¹,Morpurgo Alberto F.¹²^ORCID

Affiliation:

1. DQMP, University of Geneva, 24 Quai Ernest-Ansermet, CH-1211 Geneva, Switzerland

2. GAP, University of Geneva, 24 Quai Ernest-Ansermet, CH-1211 Geneva, Switzerland

3. Institut de Physique de la Matière Complexe, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

Funder

Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung

EU Graphene Flagship project

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

Reference52 articles.

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