Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature
Author:
Affiliation:
1. Max Planck Institute of Microstructure Physics, Weinberg 2, Halle 06120, Germany
2. Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, United States
Funder
Basic Energy Sciences
Deutsche Forschungsgemeinschaft
Office of the Vice Provost for Research and Innovation
Arkansas Economic Development Commission
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
http://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.0c02357
Reference46 articles.
1. Discovery of robust in-plane ferroelectricity in atomic-thick SnTe
2. Room-temperature ferroelectricity in MoTe2 down to the atomic monolayer limit
3. Purely in-plane ferroelectricity in monolayer SnS at room temperature
4. Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit
5. Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes
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