Vertical MoS2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV
Author:
Affiliation:
1. School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
2. Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-803, South Korea
Funder
Division of Materials Research
Samsung Electronics Co., Ltd.
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b05140
Reference39 articles.
1. Graphene Field-Effect Transistors with High On/Off Current Ratio and Large Transport Band Gap at Room Temperature
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3. Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode
4. Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating
5. Electron tunneling through atomically flat and ultrathin hexagonal boron nitride
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