In-Gap States and Band-Like Transport in Memristive Devices-Reference-Cited by-同舟云学术

In-Gap States and Band-Like Transport in Memristive Devices

Published:2018-09-21 Issue:1 Volume:19 Page:54-60
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Baeumer Christoph¹^ORCID,Funck Carsten²,Locatelli Andrea³,Menteş Tevfik Onur³,Genuzio Francesca³,Heisig Thomas¹,Hensling Felix¹,Raab Nicolas¹,Schneider Claus M.¹^ORCID,Menzel Stephan¹,Waser Rainer¹²,Dittmann Regina¹

Affiliation:

1. Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT, 52425 Juelich, Germany

2. Institute for Electronic Materials, IWE2, RWTH Aachen University, 52074 Aachen, Germany

3. Elettra - Sincrotrone Trieste S.C.p.A., S.S. 14 km - 163,5 in AREA Science Park, I-34149 Basovizza, Trieste, Italy

Funder

Helmholtz-Gemeinschaft

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b03023

Reference53 articles.

1. Point Defects in Oxides: Tailoring Materials Through Defect Engineering

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4. Memristive devices for computing

5. Redox-based memristive metal-oxide devices

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